Primary Focus

Design initially, then manufacturing (initially without being a qualified facility then with full qualification for space components etc..) then qualification (screening, burn-in etc…)

THE APPLICATION OF GAN TECHNOLOGY

Gallium Nitride (GaN) and particularly enhancement mode high electron mobility transistors (HEMT E-Mode GaN) are WBG semiconductors offering significant advancements to the power electronics world. Silicon(SI) technology has been the historical workhorse of industry with typical bandgap of 1.1eV. Some of the key WBG materials actively being adopted while providing proven stability are both silicon carbide (SiC) and gallium nitride (GaN), these advanced technologies possess significantly greater bandgaps of 3.3 eV and 3.4 eV respectively with other additional significant attributes. Semi-Zabala is dedicated to advancing HEMT GaN material designs at highest breakdown voltage, higher thermal conductivity and greater efficiencies, coupled to a significant radiation resistance far superior to historical Si Rad Hard Mosfets.

Critical path system platforms such as defense, commercial space, and high-end industrial have sought technologies surpassing current Si based power capabilities particularly those offering higher power density at a lower cost, smaller size, greater overall efficiencies while maintaining reliability demands for critical path systems. Semi-Zabala offers such capabilities with extreme radiation design performance of full single effects survival paired to the highest breakdown voltages of any in the market today. Our Radiation Hardened design platforms specifically offer technology advancements ratings at 100V, 200v, 400V up to +600V breakdown voltages.